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BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
* Silicon Epitaxial Planar Diodes * For general purpose e3 * These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the MiniMELF case with the type designations BAV100 to BAV103, the SOT-23 case with the type designations BAS19 to BAS21, and the SOD-323 case with type designations BAV19WSV to BAV21WS-V. * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
17431
Mechanical Data
Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part BAV19W-V BAV20W-V BAV21W-V Type differentiation VR = 100 V VR = 150 V VR = 200 V Ordering code BAV19W-V-GS18 or BAV19W-V-GS08 BAV20W-V-GS18 or BAV20W-V-GS08 BAV21W-V-GS18 or BAV21W-V-GS08 A8 A9 AA Marking Remarks Tape and Reel Tape and Reel Tape and Reel
Document Number 85725 Rev. 1.2, 22-Jul-05
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BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Continuous reverse voltage Test condition Part BAV19W-V BAV20W-V BAV21W-V Repetitive peak voltage BAV19W-V BAV20W-V BAV21W-V DC Forward current Rectified current (average) half wave rectification with resist. load Repetitive peak forward current Surge forward current Power dissipation Tamb = 25 C Tamb = 25 C Symbol VR VR VR VRRM VRRM VRRM IF IF(AV) Value 100 150 200 120 200 250 250 200
1) 1)
Unit V V V V V V mA mA
f 50 Hz, = 180 , Tamb = 25 C t < 1 s, Tj = 25 C Tamb = 25 C
IFRM IFSM Ptot
6251) 1 410
1)
mA A mW
1) Valid provided that leads are kept at ambient temperature
Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range
1) Valid provided that leads are kept at ambient temperature
Test condition
Symbol RthJA Tj TS
Value 3751) 1501) - 65 to + 1501)
Unit C/W C C
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Leakage current Test condition IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, Tj = 100 C VR = 150 V VR = 150 V, Tj = 100 C VR = 200 V VR = 200 V, Tj = 100 C Dynamic forward resistance Diode capacitance Reverse recovery time IF = 10 mA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA, Irr = 3 mA, RL = 100 BAV19W-V BAV19W-V BAV20W-V BAV20W-V BAV21W-V BAV21W-V Part Symbol VF VF IR IR IR IR IR IR rf Ctot trr 5 1.5 50 Min Typ. Max 1.00 1.25 100 15 100 15 100 15 Unit V V nA A nA A nA A pF ns
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Document Number 85725 Rev. 1.2, 22-Jul-05
BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
rf - Dynamic Forward Resistance ( )
1000
I F - Forward Current ( mA )
100
100
T j = 100 C
10 1
25 C
10
0.1 0.01 0 0.2 0.4 0.6 0.8 1
1
18861
1
18858
VF - Forward Voltage ( V )
10 IF - Forward Current ( mA )
100
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Dynamic Forward Resistance vs. Forward Current
I O , I F - Admissible Forward Current ( A )
I R ( Tj ) / I R ( 25 C ) - Leakage Current
0.3
1000
100
0.2
DC current I F Current (rectif.) I O
10 Reverse Voltage BAV100 V R = 50 V BAV101 V R = 100 V BAV102 V R = 150 V BAV103 V R = 200 V
0.1
1
0 0 30 60 90 120 150 Tamb - Ambient Temperature ( C )
18859
18862
0.1 0 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature ( C )
Figure 2. Admissible Forward Current vs. Ambient Temperature
Figure 5. Leakage Current vs. Junction Temperature
Ptot - Admissible Power Dissipation ( W )
500 400
Ctot - Capacitance ( pF )
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1
18863
T j = 25 C
300 200 100
0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature ( C )
1
10
100
18860
VR - Reverse Voltage ( V )
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 6. Capacitance vs. Reverse Voltage
Document Number 85725 Rev. 1.2, 22-Jul-05
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BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors Package Dimensions in mm (Inches)
1.35 (0.053) max.
0.1 (0.004) max. 0.55 (0.022)
0.25 (0.010) min.
0.15 (0.006) max.
Mounting Pad Layout
ISO Method E
Cathode Band
3.85 (0.152)
2.85 (0.112)
2.55 (0.100)
3.55 (0.140)
1.40 (0.055) 1.70 (0.067) 1.40 (0.055)
0.72 (0.028)
2.40 (0.094)
17432
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Document Number 85725 Rev. 1.2, 22-Jul-05
BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85725 Rev. 1.2, 22-Jul-05
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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